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BUP 401
IGBT Preliminary data * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Avalanche rated Pin 1 G Type BUP 401 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code C67078-A4404-A2 Pin 3 E
VCE
600V
IC
29A
Package TO-220 AB
VCE VCGR VGE IC
RGE = 20 k
Gate-emitter voltage DC collector current
20 A 29 18
TC = 25 C TC = 90 C
Pulsed collector current, tp = 1 ms
ICpuls
56 34
TC = 25 C TC = 90 C
Avalanche energy, single pulse
EAS
24
mJ
IC = 15 A, VCC = 50 V, RGE = 25 L = 200 H, Tj = 25 C
Power dissipation
Ptot
125
W -55 ... + 150 -55 ... + 150 C
TC = 25 C
Chip or operating temperature Storage temperature
Tj Tstg
Semiconductor Group
1
Jul-31-1996
BUP 401
Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -
RthJC
1
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.1 2.2 3 3.3 6.5 2.7 2.8 -
V
VGE = VCE, IC = 0.35 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 15 A, Tj = 25 C VGE = 15 V, IC = 15 A, Tj = 125 C VGE = 15 V, IC = 30 A, Tj = 25 C VGE = 15 V, IC = 30 A, Tj = 125 C
Zero gate voltage collector current
ICES
100
A nA 100
VCE = 600 V, VGE = 0 V, Tj = 25 C
Gate-emitter leakage current
IGES
VGE = 25 V, VCE = 0 V
AC Characteristics Transconductance
gfs
3 800 85 52 -
S pF 1100 130 80
VCE = 20 V, IC = 15 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
2
Jul-31-1996
BUP 401
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) Values typ. max. Unit
ns 40 60
VCC = 300 V, VGE = 15 V, IC = 15 A RGon = 68
Rise time -
tr
60 90
VCC = 300 V, VGE = 15 V, IC = 15 A RGon = 68
Turn-off delay time
td(off)
250 470
VCC = 300 V, VGE = -15 V, IC = 15 A RGoff = 68
Fall time
tf
500 680
VCC = 300 V, VGE = -15 V, IC = 15 A RGoff = 68
Semiconductor Group
3
Jul-31-1996
BUP 401
Power dissipation Ptot = (TC) parameter: Tj 150 C
130 W 110
Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C
30 A 26
Ptot
100 90
IC
24 22 20
80 70 60 50 40 30
18 16 14 12 10 8 6
20 10 0 0 20 40 60 80 100 120 C 160
4 2 0 0 20 40 60 80 100 120 C 160
TC
TC
Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C
10 2
t = 21.0s p
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 1
IGBT
K/W A
IC
100 s
ZthJC
10 1
10 0
10 -1 D = 0.50
1 ms
0.20 0.10 10 -2 0.05 0.02
10 0
10 ms
single pulse DC 10 -1 0 10
1 2 3
0.01
10
10
V 10
10 -3 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
VCE
tp
Semiconductor Group
4
Jul-31-1996
BUP 401
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 s, Tj = 25 C
30 A 26 17V 15V 13V 11V 9V 7V
IC = f (VCE)
parameter: tp = 80 s, Tj = 125 C
30 A 26 17V 15V 13V 11V 9V 7V
IC
24 22 20 18 16 14 12 10 8 6 4 2 0 0
IC
24 22 20 18 16 14 12 10 8 6 4 2 0 0
1
2
3
V
5
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 s, VCE = 20 V
30 A 26
IC
24 22 20 18 16 14 12 10 8 6 4 2 0 0
2
4
6
8
10
V 14 VGE
Semiconductor Group
5
Jul-31-1996
BUP 401
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125C
par.: VCE = 300 V, VGE = 15 V, RG = 68
10 3
t = f (RG) , inductive load , Tj = 125C
par.: VCE = 300 V, VGE = 15 V, IC = 15 A
10 3
tf t t ns tdoff ns
tf tdoff
10 2
tr
10 2
tr tdon
tdon
10 1 0
5
10
15
20
25
30
A IC
40
10 1 0
20
40
60
80 100 120 140 160
RG
200
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125C
par.: VCE = 300 V, VGE = 15 V, RG = 68
3.0
E = f (RG) , inductive load , Tj = 125C
par.: VCE = 300V, VGE = 15 V, IC = 15 A
3.0
mWs E
Eoff E
mWs
2.0
Eon 2.0
1.5
1.5 Eoff Eon
1.0
1.0
0.5
0.5
0.0 0 5 10 15 20 25 30 A IC 40
0.0 0 20 40 60 80 100 120 140 160
RG
200
Semiconductor Group
6
Jul-31-1996
BUP 401
Typ. gate charge VGE = (QGate) parameter: IC puls = 15 A
20 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 1
nF
VGE
16 14 12 10 8
C
100 V
300 V
10 0 Ciss
10 -1 6 4 2 0 0 10 -2 0 Coss Crss
10
20
30
40
50
60
70
nC
90
5
10
15
20
25
30
Q Gate
V 40 VCE
Short circuit safe operating area
Reverse biased safe operating area
ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 50 nH
10
ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V
2.5
I Csc/I C(90C)
I Cpuls/I C
6
1.5
4
1.0
2
0.5
0 0 100 200 300 400 500 600 V 800 VCE
0.0 0 100 200 300 400 500 600 V 800 VCE
Semiconductor Group
7
Jul-31-1996
BUP 401
Package Outlines Dimensions in mm Weight:
Semiconductor Group
8
Jul-31-1996

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